 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-3 package Complement to type MJ15023; MJ15025 Excellent safe operating area High DC current gain hFE = 15 (Min) @ IC = 8 Adc APPLICATIONS Designed for high power audio, disk head positioners and other linear applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION MJ15022 MJ15024 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=ae ) SYMBOL VCBO PARAMETER Collector-base voltage VCEO VEBO IC ICM IB PD Tj Tstg INC Collector-emitter voltage E SEM ANG H MJ15022 MJ15024 MJ15022 MJ15024 Open emitter OND IC CONDITIONS TOR UC VALUE 350 400 200 UNIT V Open base 250 5 16 30 5 TC=25ae 250 150 -65~200 ae ae V V A A A W Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature Open collector THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 0.70 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER MJ15022 IC=0.1A ;IB=0 MJ15024 VCEsat-1 VCEsat-2 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage MJ15022 MJ15024 MJ15022 MJ15024 IC=8A; IB=0.8A IC=16A; IB=3.2A IC=8A ; VCE=4V VCE=150V; IB=0 CONDITIONS MJ15022 MJ15024 SYMBOL MIN 200 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V 250 1.4 4.0 2.2 V V V ICEO Collector cut-off current 0.5 VCE=200V; IB=0 VCE=200V; VBE(off)=1.5V VCE=250V; VBE(off)=1.5V VEB=5V; IC=0 mA ICEX Collector cut-off current IEBO hFE-1 hFE-2 Is/b COB fT IN Emitter cut-off current DC current gain DC current gain Second breakdown collector current with base forward biased ANG CH MIC E SE IC=8A ; VCE=4V IC=16A ; VCE=4V OND TOR UC 0.5 60 5 0.25 mA mA 15 VCE=50Vdc,t=0.5 s, VCE=80Vdc,t=0.5 s,Nonrepetitive IE=0 ; VCB=10V;f=1.0MHz IC=1A ; VCE=10V;f=1.0MHz 5.0 2.0 500 4 A pF MHz Output capacitance Transition frequency 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE MJ15022 MJ15024 CHA IN E SEM NG OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJ15022 MJ15024 CHA IN E SEM NG OND IC TOR UC 4 |
Price & Availability of MJ15022
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |